a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1202 ? fax (818) 765-3004 1/2 specifications are subject to change without notice. characteristics t c = 25 c trans1.sym symbol test conditions minimum typical maximum units bv ceo i c = 10 ma 30 v bv ces i c = 10 a 50 v bv cbo i c = 10 a 50 v bv ebo i e = 10 a 6.0 v i cbo v cb = 40 v t c = 100 c 1.7 120 a i ces v ce = 50 v 10 a h fe v ce = 1.0 v i c = 10 ma v ce = 1.0 v i c = 100 ma v ce = 1.0 v i c = 100 ma t a = -55c v ce = 1.0 v i c = 300 ma v ce = 1.0 v i c = 500 ma v ce = 1.0 v i c = 500 ma t a = -55c v ce = 2.0 v i c = 800 ma v ce = 5.0 v i c = 1.0 a 30 60 30 40 35 20 25 30 150 --- silicon npn transistor 2N4013 description: the asi 2N4013 is designed for general purpose switching and amplifier applications. maximum ratings i c 1.0 a v ceo 30 v v cbo 50 v v ebo 6.0 v p diss 1.4 w @ t c = 25 c t j -65 c to +200 c t stg -65 c to +200 c jc 125 c/w package style to-18
a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1202 ? fax (818) 765-3004 2/2 2N4013 s p ecifications are sub j ect to chan g e without notice. dynamic characteristics t c = 25 o c symbol test conditions minimum typical maximum units v ce(sat) i c = 10 ma i b = 1.0 ma i c = 100 ma i b = 10 ma i c = 300 ma i b = 30 ma i c = 500 ma i b = 50 ma i c = 800 ma i b = 80 ma i c = 1.0 a i b = 100 ma 0.25 0.20 0.32 0.42 0.65 0.75 v v be(sat) i c = 10 ma i b = 1.0 ma i c = 100 ma i b = 10 ma i c = 300 ma i b = 30 ma i c = 500 ma i b = 50 ma i c = 800 ma i b = 80 ma i c = 1.0 a i b = 100 ma 0.8 0.76 0.86 1.1 1.1 1.5 1.7 v f t v ce = 10 v i c = 50 ma f = 100 mhz 300 mhz c ob v cb = 10 v f = 1.0 mhz 12 pf c ib v eb = 0.5 v f = 1.0 mhz 55 pf t d v cc = 30 v i c = 500 ma v be = 3.8 v i b1 = 50 ma 5.0 10 ns t r v cc = 30 v i c = 500 ma v be = 3.8 v i b1 = 50 ma 15 30 ns t s v cc = 30 v i c = 500 ma i b1 = 50 ma 30 50 ns t f v cc = 30 v i c = 500 ma i b1 = 50 ma 25 30 ns t on v cc = 30 v i c = 500 ma v be = 3.8 v i b1 = 50 ma 20 35 ns t off v cc = 30 v i c = 500 ma v be = 3.8 v i b1 = 50 ma 50 60 ns
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